Optoelectronic Study of Metal Oxide Thin Films

  • Arslan Anjum

Student thesis: Master's Thesis

Abstract

Metal oxides provide the unconventional combination of optical transmission and electronic conduction properties that makes them ideal for several optoelectronic applications. Unlike conventional semiconductors such as silicon, most metal oxides are transparent in the visible and near infra-red region. Yet their unique electronic band structure allows for the high availability of charge carriers without increasing absorption, contrary to dielectrics like silicon dioxide (SiO2). Depending on the number of charge carriers due to doping, metal oxides can act as conductors, semiconductors or dielectrics. Due to their transparency, conduction, ease of fabrication and long-term stability, metal oxides can be useful in numerous optoelectronic applications like LCD/OLED displays, solar cells and sensing devices. In this work, thin films of erbium oxide (Er2O3) and molybdenum doped indium oxide (IMO) were fabricated using plasma sputtering deposition at room temperature. Electrical and optical properties of these materials, essential for their usage in practical applications, were characterized using various methods. Finally, IMO was used to fabricate transparent thin-film transistors that can be used to control LCD/OLED displays.
Date of AwardDec 2016
Original languageAmerican English
SupervisorJaime Viegas (Supervisor)

Keywords

  • optoelectronic properties
  • metal oxide thin films
  • atomic layer deposition
  • fabrication techniques.

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