Nano Schottky Junction and Photoelectric Effect: Modeling and Characterization

  • Fatmah Alkindi

Student thesis: Master's Thesis

Abstract

Nano metal-semiconductor (M–S) Schottky contacts show a non-conventional behavior compared to the planar–Schottky contacts. The nano Schottky contact effect is inferred from the enhanced tunneling current in (I-V) curves at reversed biases, which has been observed experimentally in previous work . This enhancement of the tunneling current is attributed to the narrow depletion width and the enhanced electric field at the contact interface. In this work, we show that such nano Schottky junctions are sensitive to Electromagnetic waves (EM), especially in visible and infrared regimes. The incident EM waves on the nano M-S junction is partially absorbed and results in the high energy of the free electrons in the metal. This, in turn, increases the probability of electrons to tunnel through nano metal-semiconductor junction. We have incorporated this photo effect in a previous model of nano metal-semiconductor interfaces to investigate the change in the I-V behavior. The model considers different EM energies that can be captured by the excited electrons to calculate a new reduced barrier height, and hence on the tunneling current. Moreover, the model is examined using a conductive Atomic Force Microscope with a metal-coated nanotip, where the I-V data is generated and compared with a simulation model.
Date of AwardMay 2019
Original languageAmerican English

Keywords

  • Photoelectric effect
  • nano electrical characterization
  • nano Schottky
  • nanoprobes
  • conductive Atomic Force Microscope

Cite this

'