MoS2 Nanoparticles for Charge Trapping Memory

  • Aisha Yousif Al Hammadi

Student thesis: Master's Thesis

Abstract

In non-volatile memory devices scaling has been key to keep increasing performance. However, problems are introduced such as short channel effect, Drain Induced Barrier Lowering (DIBL), high leakage currents caused by sub-surface punch through effect. In addition, the need for more memory capacity is key due to the increase demand. The use of nanoparticles in the floating gate to trap more charges is very attractive these days and has garnered a lot of new research interest. In this thesis, MoS2 flakes are investigated as floating gate in memory like structure. The work involves preparing the MoS2 flakes from bulk MoS2. The produced MoS2 flakes are deposited on p-Si substrate and investigated under characterization tools including SEM, AFM, Raman, XRD and optical imaging. The tools helped in understanding the produced MoS2 nanoparticle's structure and morphology. Furthermore, MoS2 flakes were deposited on SiO2/n-Si substrate, which is the charging device in this work. The charging device showed window voltage ∆
Date of AwardDec 2021
Original languageAmerican English

Keywords

  • MoS2
  • 2D
  • Memory
  • Nano
  • Hysteresis.

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