Memristor Synthesis Application and Modeling

  • Heba N.M. Abunahla

Student thesis: Doctoral Thesis


Many of the nano devices that have been fabricated over the last few decades exhibited the electrical characteristics of the memristor device. However, the connection of the device behaviour to Chua's hypothesis (postulated in 1971) has been established by researchers at HP labs in 2008, which spurred a great interest in memristors. This thesis contributes to memristor devices synthesis, applications and modeling. In device synthesis, three different memristor device structures fabricated using different synthesis procedures are presented in this work. First, sol-gel/drop-coated micro-thick memristive devices based on novel oxides/electrodes combinations are developed and characterized. These devices are ideal for low cost applications as the synthesis is simple and cost effective. Second, this work reports on a nano-thick unipolar memristor featuring a novel Pd/Hf/HfO2/Pd stack. The electrical characteristics of the fabricated memristor are studied using variable device geometry. Third, a novel crossbar microwire-based device consisting of Nb/NbO/Pt structure exhibiting neural synapse-like adaptive conductivity (i.e., synaptic plasticity) is presented. In application aspect, this work targets radiation sensing and security applications. The fabricated sol-gel/drop-coated TiO2 memristors were exposed to Cs-137 y-rays, providing for the first time initial insights into their radiation detection capabilities. The sensing mechanism through these devices could be actuated by synergistic radiation induced and field-driven photo-electric effects. In security applications, the fabricated memristor devices exhibit unique I-V characteristic among similar devices. Thus, novel secure communication techniques are proposed and analysed. Finally, this work presents a physics-based mathematical model for anionic memristor devices. The model utilizes Poisson-Boltzmann equation to account for temperature effect on device potential at equilibrium and comprehends material effect on device behaviours. The provided model is used to simulate and predict the effect of oxide thickness, material type, and operating temperatures on the electrical characteristics of the device.
Date of AwardMay 2017
Original languageAmerican English
SupervisorBaker Mohammad (Supervisor)


  • Memristor
  • materials
  • geometry effects
  • radiation sensing
  • security.

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