Memristive Microfluidic Device for Bio-applications

  • Muayad A. Y. Abujabal

Student thesis: Master's Thesis


In this work, we present a novel planar partially reduced graphene oxide (prGO) based memristor. The device is fabricated on a flexible cyclic olefin copolymer substrate (COC) using standard photolithography. The graphene oxide layer is reduced thermally providing the ability to fine-tune the switching behavior. The device possesses analog switching characteristics with multiple on/off states within a range. prGO reduction by thermal annealing allows for precise control of the switching behavior by adjusting the reduction time. At short annealing periods (T20Hours) the switching behavior is reversed where the device switches from Low resistance state (LRS) to high resistance state (HRS). at around 14 hours, the devices are in a transitional phase with limited resistive switching. The resistive switching is affected by the oxygen functional groups contained within the GO flakes. Diffusion, and removal of these oxygen groups by the effects of the electric field and joule heating induced by the electric current result in resistive switching. complete electrical characterization tests of the fabricated devices are presented with a brief material characterization by wettability and x-ray diffraction (XRD). Also, detailed experiments are presented about using an rGO memristor as a glucose non-enzymatic sensor. The sensor was tested at neutral Ph levels with sweeping voltages to explore the sensing ability of the rGO memristor.
Date of AwardMay 2022
Original languageAmerican English


  • Graphene-Oxide
  • rGO Memristor
  • Thermal annealing
  • Memristor sensor
  • Non-enzymatic Sensor
  • Resistive switching.

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