Erbium-Doped Gallium Lanthanum Sulfide for Mid-Infrared Monolithic Laser Sources

  • Faleh Altal

Student thesis: Master's Thesis

Abstract

Currently, Mid-infrared (MIR) sensing is witnessing a rapid development and vast opportunities for investment. New applications are emerging into market such as: explosives detection, medical diagnostics, gas leakage detection, combustion control, pollution monitoring, etc. Therefore, MIR sensors are expected to continue penetrating the market to reach 2.5 billion dollars by 2015 [1]. A low cost, portable, mass producible system is a competitive platform that is achievable by on chip components. Laser sources are essential for optical detection systems. Current MIR laser sources are either bulky, such as optical parametric oscillators and fibers optics, or, like quantum cascade lasers, or are developed using sophisticated expensive molecular beam epitaxial routs, that are not compatible with CMOS (Complementary Metal–Oxide–Semiconductor) circuits integration [2]. Therefore, there is a need to develop low-cost monolithic MIR light sources to enable sensor systems that are, compact, reliable, low-power and batch-fabricated with CMOS compatible routes. In this thesis, Erbium-doped Gallium Lanthanum Sulfide (GLS) is studied as a possible gain medium to fabricate micro-disk lasers emitting in the MIR regime. A mathematical model was built to simulate lasing in this system. Using this model, lasing was shown to be possible at 4.5 µm and 2 µm wavelengths. These results are a first step to the fabrication of substrate independent CMOS compatible laser sources that can be integrated into gas sensing on-chip systems.
Date of Award2011
Original languageAmerican English
SupervisorClara Dimas (Supervisor)

Keywords

  • Erbium-Structure
  • Erbium-Optical Properties

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