Electrical, Optical, and Structural Characterization of MoO3

Abstract

The increasing demand for high-performance and scalable semiconductor devices has led to the exploration of advanced materials like molybdenum trioxide (MoO₃) for next-generation technologies. This research focuses on the synthesis, and characterization, of MoO₃ thin films and further the integration of MoO₃ into charge-trapping devices. MoO₃, a transition metal oxide with a unique layered structure, exhibits unique properties making it suitable for non-volatile memory and neuromorphic computing applications. MoO₃ deposition was done via spin coating and drop casting with optimized parameters using MoO₃ IPA-based solution. The introduction of MoO₃ solution centrifugation improved film uniformity and thickness by minimizing clustering. Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM), and electrical testing were performed to evaluate the surface morphology and electrical properties. The findings highlight a high charge carrier mobility (~1.8 × 10³ cm²/V·s) and a direct bandgap (3.5–3.7 eV). The findings further exhibit a thin MoO₃ layer thickness (~10nm), which categorizes it as a potential 2D material. The charge trapping memory device fabrication process employed Atomic Layer Deposition (ALD) of aluminum oxide (Al₂O₃) insulating layer to prevent electrical short-circuiting, followed by centrifuged MoO₃ deposition via spin coating, and thermal evaporation of silver (Ag) as the top electrodes. Such findings highlight and prove MoO₃’s potential for non-volatile memory devices and scalable electronic applications, contributing to advancements in thin-film technology and next-generation semiconductor devices.

Date of Award	12 Dec 2024
Original language	American English
Supervisor	Ammar Nayfeh (Supervisor)