Edge Termination Techniques for High-Voltage Vertical GaN Diodes

  • Mohammed Shurrab

Student thesis: Master's Thesis

Abstract

Gallium nitride (GaN) is an attractive wide bandgap semiconductor for power applications, owing to its superior electrical properties such as high critical electric field (3-4 MV/cm) and saturation drift velocity (2.5 x 107 cm/s). Recent advancements in developing native GaN substrates has drawn attention towards exploring vertical GaN power diodes with high breakdown voltages (
Date of AwardMay 2019
Original languageAmerican English
SupervisorShakti Singh (Supervisor)

Keywords

  • GaN
  • vertical diodes
  • breakdown voltage
  • edge termination (ET)
  • junction termination extension (JTE)
  • counter-doping
  • partial compensation
  • multi-zone JTEs (MZJTEs)
  • implantation-free ET structures
  • etch termination.

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