Design Considerations for Multiband Low Noise Amplifier

Student thesis: Master's Thesis


Wireless communication has shown tremendous improvement in the past few decades. This is largely due to the advancement in the CMOS technology process. At microwave frequencies, communication link of up to 10GHz bandwidth could be designed. However, the rapid development of a variety of applications on mobile devices necessitates improving the bandwidth to accommodate the new sets of applications and mobile hardware. With the low noise amplifier being a very important component of a wireless design, this project investigates the design considerations for multi-band LNA in the mm-wave frequency. It is also aimed at designing and fabricating a low noise amplifier operating in the mm-wave frequency with a low noise figure, high gain, large bandwidth and low power consumption. The work is targeted to provide a multi-band wide bandwidth of operation at 60GHz, 70GHz and 80GHz. Different issues were considered for the proper design of a multiband amplifier in the millimeter wave frequency band. The first part of this work involves choosing the right component for the design. The use of passive components was evaluated and conclusions were drawn on their suitability for multiband LNA designs. The second dealt with getting the required amount of the gain with low noise. This involves choosing the transistor to use. Issues such as sizing and biasing of the transistor were investigated. A multiband LNA has been designed in schematic level and it achieved a maximum gain of 12.6dB with a 3dB bandwidth of 30GHz that spans through the 56 to 86GHz. s11 is <-10dB from 57 – 81GHz while s22 is <-10dB from 56 – 90GHz. The noise figure is less than 7.5dB from 57 – 90GHz while the minimum noise figure is 5.9dB at 73GHz.
Date of Award2014
Original languageAmerican English
SupervisorAyman Shabra (Supervisor)


  • Wireless Communication; WLAN; Low Noise Amplifier; LNA.

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