ZnO nanowires based UV photodiodes

Lei Luo; Yanfeng Zhang; Samuel S. Mao; Liwei Lin

ZnO nanowires based UV photodiodes

Lei Luo
, Yanfeng Zhang
, Samuel S. Mao
, Liwei Lin

Mechanical & Nuclear Engineering

University of California, Berkeley

Research output: Contribution to journal › Conference article › peer-review

2 Scopus citations

Abstract

An n-type zinc oxide (ZnO) nanowires and p-type silicon heterojunction has been successfully constructed to demonstrate UV (ultra-violet) photodiodes. The prototype device consists of unintentionally doped n-type ZnO nanowires in the range of 70-120 nanometers in diameter synthesized by the bottom-up vapor-liquid-solid growth process. The nanowires are grown on top of a (100) p-silicon substrate with a doping level of ∼10¹⁸ cm^-3 to form the heterojunction. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20V reverse bias.

Original language	British English
Article number	TPb1
Pages (from-to)	427-430
Number of pages	4
Journal	Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
State	Published - 2005
Event	18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Miami Beach, FL, United States Duration: 30 Jan 2005 → 3 Feb 2005

OpenUrl availability

Full text

Cite this

@article{9a1bbdfaac27425bad5330aea3074184,

title = "ZnO nanowires based UV photodiodes",

abstract = "An n-type zinc oxide (ZnO) nanowires and p-type silicon heterojunction has been successfully constructed to demonstrate UV (ultra-violet) photodiodes. The prototype device consists of unintentionally doped n-type ZnO nanowires in the range of 70-120 nanometers in diameter synthesized by the bottom-up vapor-liquid-solid growth process. The nanowires are grown on top of a (100) p-silicon substrate with a doping level of ∼1018 cm-3 to form the heterojunction. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20V reverse bias.",

author = "Lei Luo and Yanfeng Zhang and Mao, \{Samuel S.\} and Liwei Lin",

year = "2005",

language = "British English",

pages = "427--430",

journal = "Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)",

issn = "1084-6999",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami ; Conference date: 30-01-2005 Through 03-02-2005",

}

TY - JOUR

T1 - ZnO nanowires based UV photodiodes

AU - Luo, Lei

AU - Zhang, Yanfeng

AU - Mao, Samuel S.

AU - Lin, Liwei

PY - 2005

Y1 - 2005

N2 - An n-type zinc oxide (ZnO) nanowires and p-type silicon heterojunction has been successfully constructed to demonstrate UV (ultra-violet) photodiodes. The prototype device consists of unintentionally doped n-type ZnO nanowires in the range of 70-120 nanometers in diameter synthesized by the bottom-up vapor-liquid-solid growth process. The nanowires are grown on top of a (100) p-silicon substrate with a doping level of ∼1018 cm-3 to form the heterojunction. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20V reverse bias.

AB - An n-type zinc oxide (ZnO) nanowires and p-type silicon heterojunction has been successfully constructed to demonstrate UV (ultra-violet) photodiodes. The prototype device consists of unintentionally doped n-type ZnO nanowires in the range of 70-120 nanometers in diameter synthesized by the bottom-up vapor-liquid-solid growth process. The nanowires are grown on top of a (100) p-silicon substrate with a doping level of ∼1018 cm-3 to form the heterojunction. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20V reverse bias.

UR - https://www.scopus.com/pages/publications/26944499027

M3 - Conference article

AN - SCOPUS:26944499027

SN - 1084-6999

SP - 427

EP - 430

JO - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

JF - Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)

M1 - TPb1

T2 - 18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami

Y2 - 30 January 2005 through 3 February 2005

ER -

ZnO nanowires based UV photodiodes

Abstract

OpenUrl availability

Other files and links

Fingerprint

Cite this