ZnO nanowires based UV photodiodes

Lei Luo, Yanfeng Zhang, Samuel S. Mao, Liwei Lin

Research output: Contribution to journalConference articlepeer-review

2 Scopus citations


An n-type zinc oxide (ZnO) nanowires and p-type silicon heterojunction has been successfully constructed to demonstrate UV (ultra-violet) photodiodes. The prototype device consists of unintentionally doped n-type ZnO nanowires in the range of 70-120 nanometers in diameter synthesized by the bottom-up vapor-liquid-solid growth process. The nanowires are grown on top of a (100) p-silicon substrate with a doping level of ∼1018 cm-3 to form the heterojunction. The isolation is achieved by using spin-on glass (SOG) that also works as the foundation of the top electrode. The current-voltage characteristics show the typical rectifying behavior of heterojunctions, and the photodiode exhibits response of 0.07 A/W for UV light (365 nm) under a 20V reverse bias.

Original languageBritish English
Article numberTPb1
Pages (from-to)427-430
Number of pages4
JournalProceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
StatePublished - 2005
Event18th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2005 Miami - Miami Beach, FL, United States
Duration: 30 Jan 20053 Feb 2005


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