ZnO based charge trapping memory with embedded nanoparticles

Ayman Rizk, Feyza B. Oruc, Ali K. Okyay, Ammar Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A thin film ZnO charge trapping memory cell with embedded nanoparticles is demonstrated by Physics Based TCAD simulation. The results show 3V increase in the Vt shift due to the nanoparticles for the same operating voltage. In addition a 6V reduction in the programming voltage is obtained due the nanoparticles. In addition, the effect of the trapping layer and tunnel oxide scaling on the 10 year retention time is studied.

Original languageBritish English
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 20 Aug 201223 Aug 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/TerritoryUnited Kingdom
CityBirmingham
Period20/08/1223/08/12

Keywords

  • Charge Trapping
  • Memory
  • Nano
  • Nanoparticles
  • ZnO

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