Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

Xiaojun Zhang; Dandan Wang; Matthew Beres; Lei Liu; Zhixun Ma; Peter Y. Yu; Samuel S. Mao

doi:10.1063/1.4819271

Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

Xiaojun Zhang
, Dandan Wang
, Matthew Beres
, Lei Liu
, Zhixun Ma
, Peter Y. Yu
, Samuel S. Mao

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm^-1 and 602 cm^-1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE _WZ-ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.

Original language	British English
Article number	082111
Journal	Applied Physics Letters
Volume	103
Issue number	8
DOIs	https://doi.org/10.1063/1.4819271
State	Published - 19 Aug 2013

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@article{3d19f42f64754d18a43ed1806e8d821a,

title = "Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping",

abstract = "Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm-1 and 602 cm-1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE WZ-ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.",

author = "Xiaojun Zhang and Dandan Wang and Matthew Beres and Lei Liu and Zhixun Ma and Yu, \{Peter Y.\} and Mao, \{Samuel S.\}",

note = "Funding Information: This research has been supported by Office of Nonpro-liferation and Verification Research and Development, NNSA, of the U.S. Department of Energy, under Contract No. DE-AC02-05CH11231.",

year = "2013",

month = aug,

day = "19",

doi = "10.1063/1.4819271",

language = "British English",

volume = "103",

journal = "Applied Physics Letters",

issn = "0003-6951",

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TY - JOUR

T1 - Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

AU - Zhang, Xiaojun

AU - Wang, Dandan

AU - Beres, Matthew

AU - Liu, Lei

AU - Ma, Zhixun

AU - Yu, Peter Y.

AU - Mao, Samuel S.

N1 - Funding Information: This research has been supported by Office of Nonpro-liferation and Verification Research and Development, NNSA, of the U.S. Department of Energy, under Contract No. DE-AC02-05CH11231.

PY - 2013/8/19

Y1 - 2013/8/19

N2 - Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm-1 and 602 cm-1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE WZ-ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.

AB - Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm-1 and 602 cm-1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE WZ-ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.

UR - https://www.scopus.com/pages/publications/84883347567

U2 - 10.1063/1.4819271

DO - 10.1063/1.4819271

M3 - Article

AN - SCOPUS:84883347567

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 8

M1 - 082111

ER -

Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

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