Zincblende-wurtzite phase transformation of ZnSe films by pulsed laser deposition with nitrogen doping

Xiaojun Zhang, Dandan Wang, Matthew Beres, Lei Liu, Zhixun Ma, Peter Y. Yu, Samuel S. Mao

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm-1 and 602 cm-1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE WZ-ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.

Original languageBritish English
Article number082111
JournalApplied Physics Letters
Volume103
Issue number8
DOIs
StatePublished - 19 Aug 2013

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