Abstract
Nitrogen-doped ZnSe films have been fabricated by pulsed laser deposition. It is found that the incorporation of nitrogen has resulted in a phase transformation from zincblende to wurtzite. By first-principles total energy calculations, two newly observed Raman peaks at 555 cm-1 and 602 cm-1 are assigned to vibration modes of N substituting Se in wurtzite and zincblende structures, respectively. This preference of wurtzite phase is consistent with previous prediction of the energy difference ΔE WZ-ZB between wurtzite structure and zincblende structure. This work opens a way to achieve stable ZnSe-based polytypism and may help understand the mechanisms of nitrogen doping in wide-bandgap semiconductors.
Original language | British English |
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Article number | 082111 |
Journal | Applied Physics Letters |
Volume | 103 |
Issue number | 8 |
DOIs | |
State | Published - 19 Aug 2013 |