TY - JOUR
T1 - Wear-out failure of an IGBT module in motor drives due to uneven thermal impedance of power semiconductor devices
AU - Vernica, I.
AU - Choi, U. M.
AU - Wang, H.
AU - Blaabjerg, F.
N1 - Publisher Copyright:
© 2020 Elsevier Ltd
PY - 2020/11
Y1 - 2020/11
N2 - The operating temperature of power semiconductor devices is one of the limiting factors that affects the overall reliability performance of the power electronic system. Therefore, an accurate thermal loading estimation is required for realistic reliability prediction of power electronics. However, the thermal analysis is typically performed based on rough approximations of the thermal impedance characteristic, which is provided by the manufacturer in the device datasheet. In this paper, the uncertainties introduced by the variation of IGBT thermal impedance on the lifetime prediction of a motor drive IGBT module are investigated and quantified. Thus, a better understanding of the underlying assumptions of the reliability estimation procedure and of the error margins introduced by the thermal modeling of power devices can be acquired. An analytical mission-profile-based reliability assessment methodology is used to quantify the impact of unevenly distributed IGBT thermal impedance on the power module wear-out failure under three different scenarios (e.g., realistic, worst-case, and best-case).
AB - The operating temperature of power semiconductor devices is one of the limiting factors that affects the overall reliability performance of the power electronic system. Therefore, an accurate thermal loading estimation is required for realistic reliability prediction of power electronics. However, the thermal analysis is typically performed based on rough approximations of the thermal impedance characteristic, which is provided by the manufacturer in the device datasheet. In this paper, the uncertainties introduced by the variation of IGBT thermal impedance on the lifetime prediction of a motor drive IGBT module are investigated and quantified. Thus, a better understanding of the underlying assumptions of the reliability estimation procedure and of the error margins introduced by the thermal modeling of power devices can be acquired. An analytical mission-profile-based reliability assessment methodology is used to quantify the impact of unevenly distributed IGBT thermal impedance on the power module wear-out failure under three different scenarios (e.g., realistic, worst-case, and best-case).
UR - http://www.scopus.com/inward/record.url?scp=85096062889&partnerID=8YFLogxK
U2 - 10.1016/j.microrel.2020.113800
DO - 10.1016/j.microrel.2020.113800
M3 - Article
AN - SCOPUS:85096062889
SN - 0026-2714
VL - 114
JO - Microelectronics Reliability
JF - Microelectronics Reliability
M1 - 113800
ER -