Wafer emissivity independent temperature measurements

S. Abedrabbo; F. M. Tong; N. M. Ravindra; J. Gelpey; S. Marcus; A. T. Fiory

doi:10.1007/s11664-998-0091-6

Wafer emissivity independent temperature measurements

S. Abedrabbo
, F. M. Tong
, N. M. Ravindra
, J. Gelpey
, S. Marcus
, A. T. Fiory

Physics

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si₃N₄/SiO₂ from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.

Original language	British English
Pages (from-to)	1323-1328
Number of pages	6
Journal	Journal of Electronic Materials
Volume	27
Issue number	12
DOIs	https://doi.org/10.1007/s11664-998-0091-6
State	Published - Dec 1998

Keywords

Emissivity
Hotliner
Pyrometer
Si

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10.1007/s11664-998-0091-6

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title = "Wafer emissivity independent temperature measurements",

abstract = "A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.",

keywords = "Emissivity, Hotliner, Pyrometer, Si",

author = "S. Abedrabbo and Tong, \{F. M.\} and Ravindra, \{N. M.\} and J. Gelpey and S. Marcus and Fiory, \{A. T.\}",

note = "Funding Information: The authors thank DARPA and SEMATECH for their partial financial support.",

year = "1998",

month = dec,

doi = "10.1007/s11664-998-0091-6",

language = "British English",

volume = "27",

pages = "1323--1328",

journal = "Journal of Electronic Materials",

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TY - JOUR

T1 - Wafer emissivity independent temperature measurements

AU - Abedrabbo, S.

AU - Tong, F. M.

AU - Ravindra, N. M.

AU - Gelpey, J.

AU - Marcus, S.

AU - Fiory, A. T.

N1 - Funding Information: The authors thank DARPA and SEMATECH for their partial financial support.

PY - 1998/12

Y1 - 1998/12

N2 - A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.

AB - A study on the techniques to yield wafer emissivity independent temperature measurements in rapid thermal processing has been presented. This study focuses on the Steag-AST Electronik approach to enhance wafer emissivity by using the Hotliner. The Hotliner comprises of a heavily doped p-Si substrate sandwiched with Si3N4/SiO2 from both sides. Experimental measurements on the optical properties of the Hotliner using a spectral emissometer operating in the wavelength range of 1-20 μm are presented here. Results of the simulation of the experimental data using the MIT/SEMATECH Multi-Rad model are discussed.

KW - Emissivity

KW - Hotliner

KW - Pyrometer

KW - Si

UR - https://www.scopus.com/pages/publications/0032290679

U2 - 10.1007/s11664-998-0091-6

DO - 10.1007/s11664-998-0091-6

M3 - Article

AN - SCOPUS:0032290679

SN - 0361-5235

VL - 27

SP - 1323

EP - 1328

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Wafer emissivity independent temperature measurements

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Keywords

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