Valence intersubband gain without population inversion

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Abstract

Terahertz gain without population inversion is studied in thin III-V semiconductor quantum wells. Nonequilibrium hole populations leading to intervalence gain in the transverse electric mode are investigated. The results are obtained with a Keldysh Nonequilibrium Green's Functions approach that takes into account bandstructure, manybody and nonequilibrium effects.

Original languageBritish English
Pages (from-to)61-64
Number of pages4
JournalCentral European Journal of Physics
Volume8
Issue number1
DOIs
StatePublished - Feb 2010

Keywords

  • Coupled valence bands
  • Intersubband transitions
  • Lasing without inversion
  • THz intersubband lasers

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