@inproceedings{93724e69bf93414b8ac69feff47cf572,
title = "Vacancy Modulated Analog Resistive Switching Memory Device Based on Bilayer of Zn@ZnO/ZnO for Neuromorphic Computing",
abstract = "This work proposed a vacancy-modulated analog resistive random-access memory (ReRAM) for neuromorphic computing, utilizing a structure composed of Ag/Zn@ZnO/ZnO/FTO. The resistive switching behavior can be modulated by the movement of oxygen vacancies under positive or negative voltages. This characteristic leads to the desired resistive switching behavior for neuromorphic computing. The Ag/Zn@ZnO/ZnO/FTO based analog ReRAM exhibits several desirable features, including a low operation current, forming-free operation, and self-compliance. The conductance change rate of the device can be adjusted efficiently by modifying the amplitudes and pulse intervals of spike pulses. The device can be used for short-time memory (STM) and long-term memory (LTM) memory operations with good retention time. These characteristics align with the requirements for next-generation ReRAM. The introduction of the Ag/Zn@ZnO/ZnO/FTO-based device structure paves the way for the future development of neuromorphic computing memory applications.",
keywords = "LTM, Neuromorphic computing, ReRAM, STM, Zn@ZnO coreshell, ZnO",
author = "Khan, \{Muhammad Umair\} and Baker Mohammad",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 30th IEEE International Conference on Electronics, Circuits and Systems, ICECS 2023 ; Conference date: 04-12-2023 Through 07-12-2023",
year = "2023",
doi = "10.1109/ICECS58634.2023.10382935",
language = "British English",
series = "ICECS 2023 - 2023 30th IEEE International Conference on Electronics, Circuits and Systems: Technosapiens for Saving Humanity",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "ICECS 2023 - 2023 30th IEEE International Conference on Electronics, Circuits and Systems",
address = "United States",
}