UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

Sabri Alkis; Burak Tekcan; Ammar Nayfeh; Ali Kemal Okyay

doi:10.1088/2040-8978/15/10/105002

UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

Sabri Alkis, Burak Tekcan, Ammar Nayfeh, Ali Kemal Okyay

Electrical Engineering

Bilkent University

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 10³. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W^-1 and 74-80 mA W^-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

Original language	British English
Article number	105002
Journal	Journal of Optics
Volume	15
Issue number	10
DOIs	https://doi.org/10.1088/2040-8978/15/10/105002
State	Published - Oct 2013

Keywords

atomic layer deposition
photodiodes
ZnO

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10.1088/2040-8978/15/10/105002

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title = "UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes",

abstract = "We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.",

keywords = "atomic layer deposition, photodiodes, ZnO",

author = "Sabri Alkis and Burak Tekcan and Ammar Nayfeh and Okyay, {Ali Kemal}",

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T1 - UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

AU - Alkis, Sabri

AU - Tekcan, Burak

AU - Nayfeh, Ammar

AU - Okyay, Ali Kemal

PY - 2013/10

Y1 - 2013/10

N2 - We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

AB - We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

KW - atomic layer deposition

KW - photodiodes

KW - ZnO

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DO - 10.1088/2040-8978/15/10/105002

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VL - 15

JO - Journal of Optics

JF - Journal of Optics

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M1 - 105002

ER -

UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

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