UV/vis range photodetectors based on thin film ALD grown ZnO/Si heterojunction diodes

Sabri Alkis, Burak Tekcan, Ammar Nayfeh, Ali Kemal Okyay

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25 Scopus citations

Abstract

We present ultraviolet-visible (UV/vis) range photodetectors (PDs) based on thin film ZnO (n)/Si (p) heterojunction diodes. ZnO films are grown by the atomic layer deposition (ALD) technique at growth temperatures of 80, 150, 200 and 250 ° C. The fabricated ZnO (n)/Si (p) photodetectors (ZnO-Si-PDs) show good electrical rectification characteristics with ON/OFF ratios reaching up to 103. Under UV (350 nm wavelength) and visible (475 nm wavelength) light illumination, the ZnO-Si-PDs give photoresponsivity values of 30-37 mA W-1 and 74-80 mA W-1 at 0.5 V reverse bias, respectively. Photoluminescence (PL) spectra of ALD grown ZnO thin films are used to support the results.

Original languageBritish English
Article number105002
JournalJournal of Optics
Volume15
Issue number10
DOIs
StatePublished - Oct 2013

Keywords

  • atomic layer deposition
  • photodiodes
  • ZnO

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