UV Absorption Utilizing a MoS2/Ge Nano-Junction for Solar Applications

Ayman Rezk; Ammar Nayfeh

doi:10.1109/PVSC48320.2023.10359617

UV Absorption Utilizing a MoS₂/Ge Nano-Junction for Solar Applications

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We investigate the absorption capability of MoS₂/Ge nanoscale heterojunction using platinum (Pt) coated conductive atomic force microscope (c-AFM) tip. The MoS₂/Ge interface forms the proposed heterostructure of a nano diode-based ultraviolet (UV) absorber. The electrical characteristics observed at the nanoscale junction show the current response as well as the window between the illuminated and dark conditions, are larger after the insertion of the Mos2 between the nanotip and Ge substrate. This research we believe will open a new path for the miniaturization of UV filters with high sensitivity for nano solar cells.

Original language	British English
Title of host publication	2023 IEEE 50th Photovoltaic Specialists Conference, PVSC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665460590
DOIs	https://doi.org/10.1109/PVSC48320.2023.10359617
State	Published - 2023
Event	50th IEEE Photovoltaic Specialists Conference, PVSC 2023 - San Juan, United States Duration: 11 Jun 2023 → 16 Jun 2023

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	50th IEEE Photovoltaic Specialists Conference, PVSC 2023
Country/Territory	United States
City	San Juan
Period	11/06/23 → 16/06/23

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/PVSC48320.2023.10359617

Cite this

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title = "UV Absorption Utilizing a MoS2/Ge Nano-Junction for Solar Applications",

abstract = "We investigate the absorption capability of MoS2/Ge nanoscale heterojunction using platinum (Pt) coated conductive atomic force microscope (c-AFM) tip. The MoS2/Ge interface forms the proposed heterostructure of a nano diode-based ultraviolet (UV) absorber. The electrical characteristics observed at the nanoscale junction show the current response as well as the window between the illuminated and dark conditions, are larger after the insertion of the Mos2 between the nanotip and Ge substrate. This research we believe will open a new path for the miniaturization of UV filters with high sensitivity for nano solar cells.",

author = "Ayman Rezk and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 50th IEEE Photovoltaic Specialists Conference, PVSC 2023 ; Conference date: 11-06-2023 Through 16-06-2023",

year = "2023",

doi = "10.1109/PVSC48320.2023.10359617",

language = "British English",

series = "Conference Record of the IEEE Photovoltaic Specialists Conference",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2023 IEEE 50th Photovoltaic Specialists Conference, PVSC 2023",

address = "United States",

}

Rezk, A & Nayfeh, A 2023, UV Absorption Utilizing a MoS₂/Ge Nano-Junction for Solar Applications. in 2023 IEEE 50th Photovoltaic Specialists Conference, PVSC 2023. Conference Record of the IEEE Photovoltaic Specialists Conference, Institute of Electrical and Electronics Engineers Inc., 50th IEEE Photovoltaic Specialists Conference, PVSC 2023, San Juan, United States, 11/06/23. https://doi.org/10.1109/PVSC48320.2023.10359617

UV Absorption Utilizing a MoS₂/Ge Nano-Junction for Solar Applications. / Rezk, Ayman ; Nayfeh, Ammar.
2023 IEEE 50th Photovoltaic Specialists Conference, PVSC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Nayfeh, Ammar

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N2 - We investigate the absorption capability of MoS2/Ge nanoscale heterojunction using platinum (Pt) coated conductive atomic force microscope (c-AFM) tip. The MoS2/Ge interface forms the proposed heterostructure of a nano diode-based ultraviolet (UV) absorber. The electrical characteristics observed at the nanoscale junction show the current response as well as the window between the illuminated and dark conditions, are larger after the insertion of the Mos2 between the nanotip and Ge substrate. This research we believe will open a new path for the miniaturization of UV filters with high sensitivity for nano solar cells.

AB - We investigate the absorption capability of MoS2/Ge nanoscale heterojunction using platinum (Pt) coated conductive atomic force microscope (c-AFM) tip. The MoS2/Ge interface forms the proposed heterostructure of a nano diode-based ultraviolet (UV) absorber. The electrical characteristics observed at the nanoscale junction show the current response as well as the window between the illuminated and dark conditions, are larger after the insertion of the Mos2 between the nanotip and Ge substrate. This research we believe will open a new path for the miniaturization of UV filters with high sensitivity for nano solar cells.

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