TY - JOUR
T1 - Unraveling the Properties of Interdigital Electrode-Based γ-InSe Photodetectors for Optimal Performance
AU - Hase, Yogesh
AU - Shah, Shruti
AU - Ladhane, Somnath
AU - Doiphode, Vidya
AU - Punde, Ashvini
AU - Shinde, Pratibha
AU - Rahane, Swati
AU - Kale, Dhanashri
AU - Bade, Bharat
AU - Waghmare, Ashish
AU - Prasad, Mohit
AU - Patole, Shashikant P.
AU - Jadkar, Sandesh
N1 - Publisher Copyright:
© 2001-2012 IEEE.
PY - 2024
Y1 - 2024
N2 - We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using the radio frequency (RF)-magnetron sputtering method with optimized parameters. The formation of high-quality γ -In2Se3 using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and energy dispersive spectroscopy (EDS) is explored. Subsequently, we fabricated γ -In2Se3-based photodetectors on indium tin oxide (ITO)-coated IDE using optimized parameters. The detailed investigation focused on the influence of IDE spacing, bias voltage, and light intensity on the photodetector properties. The photodetector fabricated with an IDE spacing of 335μ m exhibited outstanding properties, including the highest photoresponsivity of 14.8μ A/W and detectivity of 31.3 × 107 Jones. It also demonstrated a fast rise time of 99 ms and a decay time of 61 ms. In the bias voltage variation study, the γ -In2Se3-based photodetectors exhibited a linear relationship between the change in current and the bias potential, indicating the formation of ohmic contact between γ -In2Se3 and ITO electrodes. Examining light intensity photoresponse, we varied the power density of light from 5 to 30 mW/cm2. We observed a direct proportionality between the generated photocurrent and the incident light intensity. However, at higher light intensities, there was a decrease in photodetectivity from 3.97× 108 to 1.16 × 108 Jones and a reduction in photoresponsivity from 33.36 to 9.73μ A/W for the γ -In2Se3-based photodetectors. In conclusion, the photodetector properties of γ -In2Se3-based devices are critically influenced by IDE spacing, bias voltage, and light intensity.
AB - We successfully deposited In2Se3 films on the interdigital electrode (IDE) substrates using the radio frequency (RF)-magnetron sputtering method with optimized parameters. The formation of high-quality γ -In2Se3 using X-ray diffraction (XRD), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), field emission scanning electron microscopy (FE-SEM), and energy dispersive spectroscopy (EDS) is explored. Subsequently, we fabricated γ -In2Se3-based photodetectors on indium tin oxide (ITO)-coated IDE using optimized parameters. The detailed investigation focused on the influence of IDE spacing, bias voltage, and light intensity on the photodetector properties. The photodetector fabricated with an IDE spacing of 335μ m exhibited outstanding properties, including the highest photoresponsivity of 14.8μ A/W and detectivity of 31.3 × 107 Jones. It also demonstrated a fast rise time of 99 ms and a decay time of 61 ms. In the bias voltage variation study, the γ -In2Se3-based photodetectors exhibited a linear relationship between the change in current and the bias potential, indicating the formation of ohmic contact between γ -In2Se3 and ITO electrodes. Examining light intensity photoresponse, we varied the power density of light from 5 to 30 mW/cm2. We observed a direct proportionality between the generated photocurrent and the incident light intensity. However, at higher light intensities, there was a decrease in photodetectivity from 3.97× 108 to 1.16 × 108 Jones and a reduction in photoresponsivity from 33.36 to 9.73μ A/W for the γ -In2Se3-based photodetectors. In conclusion, the photodetector properties of γ -In2Se3-based devices are critically influenced by IDE spacing, bias voltage, and light intensity.
KW - interdigital electrode (IDE)
KW - photodetector
KW - radio frequency (RF) magnetron sputtering
UR - http://www.scopus.com/inward/record.url?scp=85199075112&partnerID=8YFLogxK
U2 - 10.1109/JSEN.2024.3425964
DO - 10.1109/JSEN.2024.3425964
M3 - Article
AN - SCOPUS:85199075112
SN - 1530-437X
VL - 24
SP - 27380
EP - 27392
JO - IEEE Sensors Journal
JF - IEEE Sensors Journal
IS - 17
ER -