Undoped p-type GaN1-xSbx alloys: Effects of annealing

N. Segercrantz; Y. Baumgartner; M. Ting; K. M. Yu; S. S. Mao; W. L. Sarney; S. P. Svensson; W. Walukiewicz

doi:10.1063/1.4972559

Undoped p-type GaN_1-xSb_x alloys: Effects of annealing

N. Segercrantz
, Y. Baumgartner
, M. Ting
, K. M. Yu
, S. S. Mao
, W. L. Sarney
, S. P. Svensson
, W. Walukiewicz

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

We report p-type behavior for undoped GaN_1-xSb_x alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN_1-xSb_x films at temperatures >400 °C is shown to generate hole concentrations greater than 10¹⁹ cm^-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

Original language	British English
Article number	252102
Journal	Applied Physics Letters
Volume	109
Issue number	25
DOIs	https://doi.org/10.1063/1.4972559
State	Published - 19 Dec 2016

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title = "Undoped p-type GaN1-xSbx alloys: Effects of annealing",

abstract = "We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.",

author = "N. Segercrantz and Y. Baumgartner and M. Ting and Yu, \{K. M.\} and Mao, \{S. S.\} and Sarney, \{W. L.\} and Svensson, \{S. P.\} and W. Walukiewicz",

note = "Funding Information: Materials processing, electrical and structural measurements, and interpretation of the data were carried out at LBNL and were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The sample growth and the TEM measurements were performed at the U.S. Army Research Laboratory. K. M. Yu acknowledges the support of the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project No. CityU 11303715. Publisher Copyright: {\textcopyright} 2016 Author(s).",

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doi = "10.1063/1.4972559",

language = "British English",

volume = "109",

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TY - JOUR

T1 - Undoped p-type GaN1-xSbx alloys

T2 - Effects of annealing

AU - Segercrantz, N.

AU - Baumgartner, Y.

AU - Ting, M.

AU - Yu, K. M.

AU - Mao, S. S.

AU - Sarney, W. L.

AU - Svensson, S. P.

AU - Walukiewicz, W.

N1 - Funding Information: Materials processing, electrical and structural measurements, and interpretation of the data were carried out at LBNL and were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The sample growth and the TEM measurements were performed at the U.S. Army Research Laboratory. K. M. Yu acknowledges the support of the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project No. CityU 11303715. Publisher Copyright: © 2016 Author(s).

PY - 2016/12/19

Y1 - 2016/12/19

N2 - We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

AB - We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.

UR - https://www.scopus.com/pages/publications/85006959863

U2 - 10.1063/1.4972559

DO - 10.1063/1.4972559

M3 - Article

AN - SCOPUS:85006959863

SN - 0003-6951

VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 252102

ER -

Undoped p-type GaN_1-xSb_x alloys: Effects of annealing

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