@article{46a33dc521f3432ea9ddd8ad81e2b06c,
title = "Undoped p-type GaN1-xSbx alloys: Effects of annealing",
abstract = "We report p-type behavior for undoped GaN1-xSbx alloys with x ≥ 0.06 grown by molecular beam epitaxy at low temperatures (≤400 °C). Rapid thermal annealing of the GaN1-xSbx films at temperatures >400 °C is shown to generate hole concentrations greater than 1019 cm-3, an order of magnitude higher than typical p-type GaN achieved by Mg doping. The p-type conductivity is attributed to a large upward shift of the valence band edge resulting from the band anticrossing interaction between localized Sb levels and extended states of the host matrix.",
author = "N. Segercrantz and Y. Baumgartner and M. Ting and Yu, {K. M.} and Mao, {S. S.} and Sarney, {W. L.} and Svensson, {S. P.} and W. Walukiewicz",
note = "Funding Information: Materials processing, electrical and structural measurements, and interpretation of the data were carried out at LBNL and were supported by the Director, Office of Science, Office of Basic Energy Sciences, Materials Sciences and Engineering Division, of the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The sample growth and the TEM measurements were performed at the U.S. Army Research Laboratory. K. M. Yu acknowledges the support of the General Research Fund of the Research Grants Council of Hong Kong SAR, China, under Project No. CityU 11303715. Publisher Copyright: {\textcopyright} 2016 Author(s).",
year = "2016",
month = dec,
day = "19",
doi = "10.1063/1.4972559",
language = "British English",
volume = "109",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "25",
}