Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

N. El-Atab; A. Nayfeh

doi:10.1149/07205.0073ecst

Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

N. El-Atab
, A. Nayfeh

Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

Original language	British English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 17
Editors	J. M. Zavada, V. Chakrapani, S. Jang, T. J. Anderson, J. K. Hite
Pages	73-79
Number of pages	7
Edition	5
ISBN (Electronic)	9781607687153
DOIs	https://doi.org/10.1149/07205.0073ecst
State	Published - 2016
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States Duration: 29 May 2016 → 2 Jun 2016

Publication series

Name	ECS Transactions
Number	5
Volume	72
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Conference

Conference	Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting
Country/Territory	United States
City	San Diego
Period	29/05/16 → 2/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1149/07205.0073ecst

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@inproceedings{ace090ebd7e148be873e345096570cf3,

title = "Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices",

abstract = "ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.",

author = "N. El-Atab and A. Nayfeh",

note = "Funding Information: This work was supported by Masdar Institute of Science and Technology and the Office of Naval Research global grant N62909-16-1-2031. N. El-Atab gratefully acknowledges financial support provided by L'Or{\'e}al-UNESCO For Women in Science Middle East Fellowship. Publisher Copyright: {\textcopyright}The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting ; Conference date: 29-05-2016 Through 02-06-2016",

year = "2016",

doi = "10.1149/07205.0073ecst",

language = "British English",

series = "ECS Transactions",

number = "5",

pages = "73--79",

editor = "Zavada, \{J. M.\} and V. Chakrapani and S. Jang and Anderson, \{T. J.\} and Hite, \{J. K.\}",

booktitle = "Wide Bandgap Semiconductor Materials and Devices 17",

edition = "5",

}

El-Atab, N & Nayfeh, A 2016, Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices. in JM Zavada, V Chakrapani, S Jang, TJ Anderson & JK Hite (eds), Wide Bandgap Semiconductor Materials and Devices 17. 5 edn, ECS Transactions, no. 5, vol. 72, pp. 73-79, Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting, San Diego, United States, 29/05/16. https://doi.org/10.1149/07205.0073ecst

Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices. / El-Atab, N.; Nayfeh, A.
Wide Bandgap Semiconductor Materials and Devices 17. ed. / J. M. Zavada; V. Chakrapani; S. Jang; T. J. Anderson; J. K. Hite. 5. ed. 2016. p. 73-79 (ECS Transactions; Vol. 72, No. 5).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

AU - El-Atab, N.

AU - Nayfeh, A.

N1 - Funding Information: This work was supported by Masdar Institute of Science and Technology and the Office of Naval Research global grant N62909-16-1-2031. N. El-Atab gratefully acknowledges financial support provided by L'Oréal-UNESCO For Women in Science Middle East Fellowship. Publisher Copyright: ©The Electrochemical Society.

PY - 2016

Y1 - 2016

N2 - ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

AB - ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

UR - https://www.scopus.com/pages/publications/85010685737

U2 - 10.1149/07205.0073ecst

DO - 10.1149/07205.0073ecst

M3 - Conference contribution

AN - SCOPUS:85010685737

T3 - ECS Transactions

SP - 73

EP - 79

BT - Wide Bandgap Semiconductor Materials and Devices 17

A2 - Zavada, J. M.

A2 - Chakrapani, V.

A2 - Jang, S.

A2 - Anderson, T. J.

A2 - Hite, J. K.

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting

Y2 - 29 May 2016 through 2 June 2016

ER -

Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

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