Ultra-small ZnO nanoparticles for charge storage in MOS-memory devices

N. El-Atab, A. Nayfeh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

3 Scopus citations

Abstract

ZnO-nanoparticles have gained considerable interest by industry and research due to their excellent properties. However, the agglomeration of nanoparticles is considered to be a limiting factor since it can affect the desirable physical and electronic properties of the nanoparticles. In this work, 1-to-5-nm-thick ZnO-nanoparticles deposited by dip-coating are studied. The results show that dip-coating leads to 1-D quantum confinement in ZnO (2-D nanostructures). Memory devices with ZnO-nanoparticles charge trapping layer show that a large memory window can be obtained at low operating-voltages due to the large available charge trap states in ZnO. Moreover, the excellent retention and endurance characteristics show that ZnO nanoparticles are promising for low-power memory applications.

Original languageBritish English
Title of host publicationWide Bandgap Semiconductor Materials and Devices 17
EditorsJ. M. Zavada, V. Chakrapani, S. Jang, T. J. Anderson, J. K. Hite
Pages73-79
Number of pages7
Edition5
ISBN (Electronic)9781607687153
DOIs
StatePublished - 2016
EventSymposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting - San Diego, United States
Duration: 29 May 20162 Jun 2016

Publication series

NameECS Transactions
Number5
Volume72
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Conference

ConferenceSymposium on Wide Bandgap Semiconductor Materials and Devices 17 - 229th ECS Meeting
Country/TerritoryUnited States
CitySan Diego
Period29/05/162/06/16

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