Two-thermal-states model predictive control for IGBT in three-phase inverter

Yi Liu, Ping Liu, Huai Wang, Meng Huang, Xiaoming Zha

    Research output: Contribution to journalArticlepeer-review

    2 Scopus citations


    Insulated Gate Bipolar Transistor (IGBT) is a key component in the power electronics application. The associated active thermal model predictive control is an effective way to reduce the thermal stress of power devices by lowering average switching frequency, therefore prolonging lifetime. However, the reduction of switching frequency will impair the power quality of the system. This paper represents a model predictive control method with two thermal states for a three-phase inverter. The two thermal states are “reliability critical state” and “reliability non-critical state” which are of lower and higher switching frequency respectively. The transition of the two thermal states is achieved by changing the coefficients of the cost function in the model predictive control. The criterion of the state shifting is derived from B10 lifetime provided by manufacturer. The method is verified by both simulation and experiment.

    Original languageBritish English
    Pages (from-to)1098-1102
    Number of pages5
    JournalMicroelectronics Reliability
    StatePublished - Sep 2018


    • Active thermal control
    • IGBT lifetime
    • Model predictive control


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