Two-particle element for magnetic memory

D. M. Forrester, Karl E. Kürten, F. V. Kusmartsev

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We propose to use a stack of two or more isolated disk-shaped particles as an element for magnetic memory. Such an element represents a magnetic tunnel junction which is characterized by a few stable states separated by large energy barriers. The switching between the states may be induced by applying a spin-polarized current or a magnetic field. We have described the behavior of the stable states and the associated energies of the stack in magnetic fields. In addition, we have described the magnetizations as well as all possible types of hysteresis loops which such an element may have. We discuss the stability of the information stored in the element and determine a critical magnetic field at which the switching of the element arises.

Original languageBritish English
Article number134404
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number13
StatePublished - 9 Oct 2007


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