Two-dimensional quantum well wire semiconductor laser arrays

We have fabricated two-dimensional GaAs/AlGaAs quantum well wire (2D-QWW) semiconductor laser arrays by metallorganic chemical vapor deposition on nonplanar substrates and performed surface-emitting electroluminescence to study their subband structures. Using an appropriately high Al mole fraction (40%) and low growth temperature, we have achieved the lowest subband separation as large as 27meV, which is almost equal to thermal energy at room temperature. Even though the effective width of QWWs is extremely small (-6nm), the linear light output power of the laser arrays has still reached over 100mW under pulsed conditions (1μs pulses at 1kHz) at room temperature. It is mainly due to the adopting 2D laser array structures in QWW device design.