Tunnel diodes fabricated from CdSe nanocrystal monolayers

S. H. Kim; G. Markovich; S. Rezvani; S. H. Choi; K. L. Wang; J. R. Heath

doi:10.1063/1.123035

Tunnel diodes fabricated from CdSe nanocrystal monolayers

S. H. Kim, G. Markovich, S. Rezvani, S. H. Choi, K. L. Wang, J. R. Heath

Mechanical & Nuclear Engineering

UCLA

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C₁₉H₃₉CO₂H), and an Al electrode. Each device was approximately 100 μm². Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

Original language	British English
Pages (from-to)	317-319
Number of pages	3
Journal	Applied Physics Letters
Volume	74
Issue number	2
DOIs	https://doi.org/10.1063/1.123035
State	Published - 11 Jan 1999

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abstract = "A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.",

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AU - Markovich, G.

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AU - Heath, J. R.

PY - 1999/1/11

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N2 - A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

AB - A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

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Tunnel diodes fabricated from CdSe nanocrystal monolayers

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