Tunnel diodes fabricated from CdSe nanocrystal monolayers

S. H. Kim, G. Markovich, S. Rezvani, S. H. Choi, K. L. Wang, J. R. Heath

Research output: Contribution to journalArticlepeer-review

50 Scopus citations


A parallel approach for fabricating nanocrystal-based semiconductor-insulator-metal tunnel diodes is presented. The devices consisted of a Au electrode, a monolayer of 38 A CdSe nanocrystals, an insulating bilayer of eicosanoic acid (C19H39CO2H), and an Al electrode. Each device was approximately 100 μm2. Conductance measurements at 77 K reveal strong diode behavior and evidence of Coulomb blockade and staircase structure. A single barrier model was found to reproduce the electronic characteristics of these devices.

Original languageBritish English
Pages (from-to)317-319
Number of pages3
JournalApplied Physics Letters
Issue number2
StatePublished - 11 Jan 1999


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