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Trap-assisted charge injection into large bandgap polymer semiconductors

  • Dongdong Wang
  • , Michael Fina
  • , Suhan Kim
  • , Chunmei Zhang
  • , Ting Zhang
  • , Yonghong Deng
  • , Kai Chen
  • , Lijuan Liang
  • , Samuel S. Mao
  • , Andrew M. Minor
  • , Gao Liu
  • Beijing Institute of Graphic Communication
  • Lawrence Berkeley National Laboratory
  • University of California, Berkeley
  • Beijing Institute of Technology
  • South China University of Technology
  • Xi'an Jiaotong University

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The trap-assisted charge injection in polyfluorene-poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS) model systems with an Al or Al/LiF cathode is investigated. We find that inserting 1.3 nm LiF increases electron and hole injections simultaneously and the increase of holes is greater than electrons. The evolution of internal interfaces within polymer light-emitting diodes is observed by transmission electron microscopy, which reveals that the introduction of LiF improves the interface stability at both the cathode (cathode/polymer) and the anode (indium tin oxide (ITO)/PEDOT:PSS). Above-mentioned experimental results have been compared to the numerical simulations with a revised Davids model and potential physical mechanisms for the trap-assisted charge injection are discussed.

Original languageBritish English
Article number2427
JournalMaterials
Volume12
Issue number15
DOIs
StatePublished - 1 Aug 2019

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

Keywords

  • Charge injection
  • Interface stability
  • Polymer light-emitting diodes
  • Trap

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