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Transition of crystalline orientation of yttria-stabilized zirconia films grown by pulsed laser deposition

  • X. Zhang
  • , P. Berdahl
  • , A. Klini
  • , C. Fotakis
  • , S. S. Mao
  • Lawrence Berkeley National Laboratory
  • Institute of Electronic Structure and Laser of the Foundation for Research and Technology-Hellas

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

We have synthesized 5 wt.∈%-yttria-stabilized zirconia (YSZ) films on stainless steel and glass substrates by pulsed laser deposition (PLD) at substrate temperatures between 60 and 600 °C and oxygen pressures from 0.1 to 1000 mTorr. While highly (101)-oriented tetragonal YSZ films are obtained at intermediate oxygen pressures, near complete (001)-oriented tetragonal films are achieved at lower oxygen pressures, with a full width at half maximum X-ray peak of only 0.4°. The results can be attributed to surface energy-induced orientation; that is, the lowest surface energy plane of the YSZ films changes from (101) plane at intermediate pressures to the (001) plane at lower oxygen pressures due to surface relaxation.

Original languageBritish English
Pages (from-to)407-410
Number of pages4
JournalApplied Physics A: Materials Science and Processing
Volume91
Issue number3
DOIs
StatePublished - Jun 2008

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