Transconductance and Coulomb blockade properties of in-plane grown carbon nanotube field effect transistors

Nan Ai, Onejae Sul, Milan Begliarbekov, Qiang Song, Kitu Kumar, Daniel S. Choi, Eui Hyeok Yang, Stefan Strauf

Research output: Contribution to journalArticlepeer-review

1 Scopus citations


Single electron transistors (SETs) made from single wall carbon nanotubes (SWCNTs) are promising for quantum electronic devices operating with ultra-low power consumption and allow fundamental studies of electron transport. We report on SETs made by registered in-plane growth utilizing tailored nanoscale catalyst patterns and chemical vapor deposition. Metallic SWCNTs have been removed by an electrical burn-in technique and the common gate hysteresis was removed using PMMA and baking, leading to field effect transistors with large on/off ratios up to 105. Further segmentation into 200 nm short semiconducting SWCNT devices created quantum dots which display conductance oscillations in the Coulomb blockade regime. The demonstrated utilization of registered in-plane growth opens possibilities to create novel SET device geometries which are more complex, i.e., laterally ordered and scalable, as required for advanced quantum electronic devices.

Original languageBritish English
Pages (from-to)73-78
Number of pages6
JournalNanoscience and Nanotechnology Letters
Issue number2
StatePublished - Jun 2010


  • Carbon Nanotubes
  • Coulomb Blockade
  • Field-Effect Transistor
  • Gate Hysteresis
  • In-Plane Growth
  • Single Electron Transistor


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