Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell

Sabina Abdul Hadi; Tim Milakovich; Rushabh Shah; Eugene A. Fitzgerald; Ammar Nayfeh

doi:10.1109/PVSC.2017.8366411

Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell

Sabina Abdul Hadi
, Tim Milakovich
, Rushabh Shah
, Eugene A. Fitzgerald
, Ammar Nayfeh

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs_0.76P_0.24 cell, grown on Si_1-yGe_y/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1- μm GaAs_0.76P_0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.

Original language	British English
Title of host publication	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1253-1255
Number of pages	3
ISBN (Electronic)	9781509056057
DOIs	https://doi.org/10.1109/PVSC.2017.8366411
State	Published - 2017
Event	44th IEEE Photovoltaic Specialist Conference, PVSC 2017 - Washington, United States Duration: 25 Jun 2017 → 30 Jun 2017

Publication series

Name	2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017

Conference

Conference	44th IEEE Photovoltaic Specialist Conference, PVSC 2017
Country/Territory	United States
City	Washington
Period	25/06/17 → 30/06/17

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

III-V semiconductor materials
Multi-junction
Photovoltaic cells
Silicon
Silicon germanium

Access to Document

10.1109/PVSC.2017.8366411

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Full text

Cite this

Hadi, S. A., Milakovich, T., Shah, R., Fitzgerald, E. A., & Nayfeh, A. (2017). Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. In 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017 (pp. 1253-1255). (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2017.8366411

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title = "Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell",

abstract = "Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8\% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1- μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26\% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.",

keywords = "III-V semiconductor materials, Multi-junction, Photovoltaic cells, Silicon, Silicon germanium",

author = "Hadi, \{Sabina Abdul\} and Tim Milakovich and Rushabh Shah and Fitzgerald, \{Eugene A.\} and Ammar Nayfeh",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",

year = "2017",

doi = "10.1109/PVSC.2017.8366411",

language = "British English",

series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Hadi, SA, Milakovich, T, Shah, R, Fitzgerald, EA & Nayfeh, A 2017, Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. in 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. 2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017, Institute of Electrical and Electronics Engineers Inc., pp. 1253-1255, 44th IEEE Photovoltaic Specialist Conference, PVSC 2017, Washington, United States, 25/06/17. https://doi.org/10.1109/PVSC.2017.8366411

Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. / Hadi, Sabina Abdul; Milakovich, Tim; Shah, Rushabh et al.
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. 1253-1255 (2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hadi, Sabina Abdul

AU - Milakovich, Tim

AU - Shah, Rushabh

AU - Fitzgerald, Eugene A.

AU - Nayfeh, Ammar

PY - 2017

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N2 - Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1- μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.

AB - Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1- μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.

KW - III-V semiconductor materials

KW - Multi-junction

KW - Photovoltaic cells

KW - Silicon

KW - Silicon germanium

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