Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell

Sabina Abdul Hadi; Tim Milakovich; Rushabh Shah; Eugene A. Fitzgerald; Ammar Nayfeh

doi:10.1109/PVSC.2016.7749948

Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell

Sabina Abdul Hadi
, Tim Milakovich
, Rushabh Shah
, Eugene A. Fitzgerald
, Ammar Nayfeh

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs_0.76P_0.24 cell, grown on Si_1-yGe_y/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1-μm GaAs_0.76P_0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.

Original language	British English
Title of host publication	2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	1881-1886
Number of pages	6
ISBN (Electronic)	9781509027248
DOIs	https://doi.org/10.1109/PVSC.2016.7749948
State	Published - 18 Nov 2016
Event	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016 - Portland, United States Duration: 5 Jun 2016 → 10 Jun 2016

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	2016-November
ISSN (Print)	0160-8371

Conference

Conference	43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Country/Territory	United States
City	Portland
Period	5/06/16 → 10/06/16

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

III-V semiconductor materials
multi-junction
photovoltaic cells
silicon
silicon germanium

Access to Document

10.1109/PVSC.2016.7749948

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Full text

Cite this

Hadi, S. A., Milakovich, T., Shah, R., Fitzgerald, E. A., & Nayfeh, A. (2016). Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016 (pp. 1881-1886). Article 7749948 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PVSC.2016.7749948

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title = "Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell",

abstract = "Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8\% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1-μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26\% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.",

keywords = "III-V semiconductor materials, multi-junction, photovoltaic cells, silicon, silicon germanium",

author = "Hadi, \{Sabina Abdul\} and Tim Milakovich and Rushabh Shah and Fitzgerald, \{Eugene A.\} and Ammar Nayfeh",

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Hadi, SA, Milakovich, T, Shah, R, Fitzgerald, EA & Nayfeh, A 2016, Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. in 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016., 7749948, Conference Record of the IEEE Photovoltaic Specialists Conference, vol. 2016-November, Institute of Electrical and Electronics Engineers Inc., pp. 1881-1886, 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016, Portland, United States, 5/06/16. https://doi.org/10.1109/PVSC.2016.7749948

Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. / Hadi, Sabina Abdul; Milakovich, Tim; Shah, Rushabh et al.
2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 1881-1886 7749948 (Conference Record of the IEEE Photovoltaic Specialists Conference; Vol. 2016-November).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Hadi, Sabina Abdul

AU - Milakovich, Tim

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AU - Nayfeh, Ammar

PY - 2016/11/18

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N2 - Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1-μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.

AB - Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1-μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.

KW - III-V semiconductor materials

KW - multi-junction

KW - photovoltaic cells

KW - silicon

KW - silicon germanium

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Hadi SA, Milakovich T, Shah R, Fitzgerald EA, Nayfeh A. Towards demonstration of GaAs_0.76P_0.24/Si dual junction step-cell. In 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016. Institute of Electrical and Electronics Engineers Inc. 2016. p. 1881-1886. 7749948. (Conference Record of the IEEE Photovoltaic Specialists Conference). doi: 10.1109/PVSC.2016.7749948