@inproceedings{03a992ac4b2a439e8a09bfccc423d004,
title = "Towards demonstration of GaAs0.76P0.24/Si dual junction step-cell",
abstract = "Here we present an initial demonstration of a dual junction step-cell using single junction (SJ) GaAs0.76P0.24 cell, grown on Si1-yGey/Si substrates, as the top cell and Si as the bottom cell. To demonstrate step-cell, two SJ cells are connected in series, without removing SiGe/Si carrier from III-V cell, and illuminated Si cell area is varied. Measured efficiency of optimized demo step-cell under 1 sun and without anti-reflective coating on III-V cell is ∼11.8% Using SJ cells characterization and optical data, we estimate maximum efficiency of bonded 1- μm GaAs0.76P0.24// 650-μm Si step-cell to be ∼26% at optimized total-to-top cell area ratio equal to 1.1. Results presented here show that step-cell can be used as added optimization design parameter for tandem cells.",
keywords = "III-V semiconductor materials, Multi-junction, Photovoltaic cells, Silicon, Silicon germanium",
author = "Hadi, {Sabina Abdul} and Tim Milakovich and Rushabh Shah and Fitzgerald, {Eugene A.} and Ammar Nayfeh",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 44th IEEE Photovoltaic Specialist Conference, PVSC 2017 ; Conference date: 25-06-2017 Through 30-06-2017",
year = "2017",
doi = "10.1109/PVSC.2017.8366411",
language = "British English",
series = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "1253--1255",
booktitle = "2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017",
address = "United States",
}
