TY - JOUR
T1 - Tin - an unlikely ally for silicon field effect transistors?
AU - Hussain, Aftab M.
AU - Fahad, Hossain M.
AU - Singh, Nirpendra
AU - Sevilla, Galo A.Torres
AU - Schwingenschlögl, Udo
AU - Hussain, Muhammad M.
PY - 2014/4
Y1 - 2014/4
N2 - We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis.
AB - We explore the effectiveness of tin (Sn), by alloying it with silicon, to use SiSn as a channel material to extend the performance of silicon based complementary metal oxide semiconductors. Our density functional theory based simulation shows that incorporation of tin reduces the band gap of Si(Sn). We fabricated our device with SiSn channel material using a low cost and scalable thermal diffusion process of tin into silicon. Our high-κ/metal gate based multi-gate-field-effect-transistors using SiSn as channel material show performance enhancement, which is in accordance with the theoretical analysis.
KW - Density functional theory
KW - Field-effect transistor
KW - SiSn
KW - Tin
UR - http://www.scopus.com/inward/record.url?scp=84898052233&partnerID=8YFLogxK
U2 - 10.1002/pssr.201308300
DO - 10.1002/pssr.201308300
M3 - Article
AN - SCOPUS:84898052233
SN - 1862-6254
VL - 8
SP - 332
EP - 335
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
IS - 4
ER -