@article{0c6bdb093c3a4e019801cd18f63c711d,
title = "Thin-film ZnO charge-trapping memory cell grown in a single ALD step",
abstract = "A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the \$I\textbackslash{}rm drain- \$V\textbackslash{}rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.",
keywords = "Atomic layer deposition (ALD), Flash memory, thin-film transistor (TFT), ZnO",
author = "Oruc, \{Feyza B.\} and Furkan Cimen and Ayman Rizk and Mohammad Ghaffari and Ammar Nayfeh and Okyay, \{Ali K.\}",
note = "Funding Information: Manuscript received September 7, 2012; accepted September 14, 2012. Date of publication October 26, 2012; date of current version November 22, 2012. This work was supported in part by the European Union FP7 Marie Curie IRG under Grant 239444; by the COST NanoTP; and by the Scientific and Technological Research Council of Turkey (T{\"U}B{\'Y}TAK) under Grant 108E163, Grant 109E044, Grant 112M004, and Grant 112E052. The review of this letter was arranged by Editor S. J. Koester.",
year = "2012",
doi = "10.1109/LED.2012.2219493",
language = "British English",
volume = "33",
pages = "1714--1716",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "12",
}