Thin-film ZnO charge-trapping memory cell grown in a single ALD step

Feyza B. Oruc, Furkan Cimen, Ayman Rizk, Mohammad Ghaffari, Ammar Nayfeh, Ali K. Okyay

Research output: Contribution to journalArticlepeer-review

41 Scopus citations


A thin-film ZnO-based single-transistor memory cell with a gate stack deposited in a single atomic layer deposition step is demonstrated. Thin-film ZnO is used as channel material and charge-trapping layer for the first time. The extracted mobility and subthreshold slope of the thin-film device are 23 cm2/V · s and 720 mV/dec, respectively. The memory effect is verified by a 2.35-V hysteresis in the $I\rm drain- $V\rm gate curve. Physics-based TCAD simulations show very good agreement with the experimental results providing insight to the charge-trapping physics.

Original languageBritish English
Article number6341043
Pages (from-to)1714-1716
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - 2012


  • Atomic layer deposition (ALD)
  • Flash memory
  • thin-film transistor (TFT)
  • ZnO


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