Abstract
Thin-film transistors (TFT) were fabricated at room-temperature (RT) utilizing zinc oxide (ZnO) channel and indium molybdenum oxide (IMO) electrodes. The common bottom-gate TFTs were fabricated on commercially available thermal silicon oxide (100 nm thick) coated silicon wafers. A total of 100 devices were made in a 1 inch square area as 10 × 10 matrix, by varying the channel width and length, between 5 μm and 300 μm. Output and transfer characteristics of the fabricated devices were extracted from a semiconductor parameter analyzer. A threshold voltage (VTh) of 10 V and an ION/IOFF ratio of 1 × 10-5 were obtained. The impact of channel dimensions on the device performance was investigated, confirming that the saturation current (Isat) is directly proportional to the channel width (W), and inversely proportional to channel length (L), in agreement with field effect device theory.
Original language | British English |
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Pages (from-to) | 281-285 |
Number of pages | 5 |
Journal | MRS Advances |
Volume | 1 |
Issue number | 4 |
DOIs | |
State | Published - 2016 |