Thin film c-Si solar cell enhanced with impact ionization

Vikas Kumar; Ammar Nayfeh

doi:10.1109/EMS.2013.114

Thin film c-Si solar cell enhanced with impact ionization

Vikas Kumar, Ammar Nayfeh

Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

1 Scopus citations

Abstract

The effect of Impact Ionization (II) on thin film c-Si solar cells is modeled and investigated by TCAD simulation. The doping concentration of absorber layer is varied to see the effect of Impact Ionization (II) on c-Si solar cell by increasing the electric field. The results show that, II can increase the short circuit current (J_sc). Namely we show a 2mA/cm² increase in J_sc by increasing the doping of the c-Si layer from 1×10¹⁸ cm^-3 to 1×10 ¹⁹ cm^-3. In addition the Internal Quantum Efficiency (IQE) increases from 98% to 116% with impact ionization.

Original language	British English
Pages	681-684
Number of pages	4
DOIs	https://doi.org/10.1109/EMS.2013.114
State	Published - 2013
Event	UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013 - Manchester, United Kingdom Duration: 20 Nov 2013 → 22 Nov 2013

Conference

Conference	UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013
Country/Territory	United Kingdom
City	Manchester
Period	20/11/13 → 22/11/13

Keywords

Impact Ionization
Internal Quantum Efficiency
Short circuit current density
solar cells
thin film

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/EMS.2013.114

Cite this

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title = "Thin film c-Si solar cell enhanced with impact ionization",

abstract = "The effect of Impact Ionization (II) on thin film c-Si solar cells is modeled and investigated by TCAD simulation. The doping concentration of absorber layer is varied to see the effect of Impact Ionization (II) on c-Si solar cell by increasing the electric field. The results show that, II can increase the short circuit current (Jsc). Namely we show a 2mA/cm2 increase in Jsc by increasing the doping of the c-Si layer from 1×1018 cm-3 to 1×10 19 cm-3. In addition the Internal Quantum Efficiency (IQE) increases from 98% to 116% with impact ionization.",

keywords = "Impact Ionization, Internal Quantum Efficiency, Short circuit current density, solar cells, thin film",

author = "Vikas Kumar and Ammar Nayfeh",

year = "2013",

doi = "10.1109/EMS.2013.114",

language = "British English",

pages = "681--684",

note = "UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013 ; Conference date: 20-11-2013 Through 22-11-2013",

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T1 - Thin film c-Si solar cell enhanced with impact ionization

AU - Kumar, Vikas

AU - Nayfeh, Ammar

PY - 2013

Y1 - 2013

N2 - The effect of Impact Ionization (II) on thin film c-Si solar cells is modeled and investigated by TCAD simulation. The doping concentration of absorber layer is varied to see the effect of Impact Ionization (II) on c-Si solar cell by increasing the electric field. The results show that, II can increase the short circuit current (Jsc). Namely we show a 2mA/cm2 increase in Jsc by increasing the doping of the c-Si layer from 1×1018 cm-3 to 1×10 19 cm-3. In addition the Internal Quantum Efficiency (IQE) increases from 98% to 116% with impact ionization.

AB - The effect of Impact Ionization (II) on thin film c-Si solar cells is modeled and investigated by TCAD simulation. The doping concentration of absorber layer is varied to see the effect of Impact Ionization (II) on c-Si solar cell by increasing the electric field. The results show that, II can increase the short circuit current (Jsc). Namely we show a 2mA/cm2 increase in Jsc by increasing the doping of the c-Si layer from 1×1018 cm-3 to 1×10 19 cm-3. In addition the Internal Quantum Efficiency (IQE) increases from 98% to 116% with impact ionization.

KW - Impact Ionization

KW - Internal Quantum Efficiency

KW - Short circuit current density

KW - solar cells

KW - thin film

UR - http://www.scopus.com/inward/record.url?scp=84899580457&partnerID=8YFLogxK

U2 - 10.1109/EMS.2013.114

DO - 10.1109/EMS.2013.114

M3 - Paper

AN - SCOPUS:84899580457

SP - 681

EP - 684

T2 - UKSim-AMSS 7th European Modelling Symposium on Computer Modelling and Simulation, EMS 2013

Y2 - 20 November 2013 through 22 November 2013

ER -

Thin film c-Si solar cell enhanced with impact ionization

Abstract

Conference

Keywords

UN SDGs

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