Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56%

Sabina Abdul Hadi; Pouya Hashemi; Nicole Dilello; Ammar Nayfeh; Judy L. Hoyt

doi:10.1109/PVSC.2012.6317556

Thin film a-Si/c-Si_1-xGe_x/c-Si heterojunction solar cells with Ge content up to 56%

Sabina Abdul Hadi
, Pouya Hashemi
, Nicole Dilello
, Ammar Nayfeh
, Judy L. Hoyt

Electrical Engineering

Massachusetts Institute of Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

20 Scopus citations

Abstract

Thin film a-Si(n⁺)/c-Si_1-xGe_x(p)/c- Si(p⁺) heterojunction solar cells are fabricated with Ge content up to 56 atomic percent. Solar cells with junction layers consisting of Si, Si _0.75Ge_0.25, Si_0.59Ge_0.41, and Si_0.44Ge_0.56 are compared to study the effect of increasing Ge concentration. The measured short-circuit current (J_sc) increases from 14 mA/cm² for Si cells to 21 mA/cm² for the Si_0.44Ge_0.56 cells, for one light pass and a 2 μm-thick SiGe layer. The results show an open-circuit voltage (V _oc) of 0.61 V for Si cells, dropping to 0.32 V for Si _0.44Ge_0.56, consistent with the reduction in band-gap. Quantum efficiency measurements highlight the improved spectral response for higher Ge percentages. Physics based TCAD simulations combined with the experimental results are used to extract lifetime and interface velocity.

Original language	British English
Title of host publication	Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages	5-8
Number of pages	4
DOIs	https://doi.org/10.1109/PVSC.2012.6317556
State	Published - 2012
Event	38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States Duration: 3 Jun 2012 → 8 Jun 2012

Publication series

Name	Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)	0160-8371

Conference

Conference	38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/Territory	United States
City	Austin, TX
Period	3/06/12 → 8/06/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

carrier lifetime
HIT solar cells
photovoltaic cells
SiGe thin film
silicon

Access to Document

10.1109/PVSC.2012.6317556

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Cite this

@inproceedings{8126c32180c24eebb6a932dece2b2277,

title = "Thin film a-Si/c-Si1-xGex/c-Si heterojunction solar cells with Ge content up to 56\%",

abstract = "Thin film a-Si(n+)/c-Si1-xGex(p)/c- Si(p+) heterojunction solar cells are fabricated with Ge content up to 56 atomic percent. Solar cells with junction layers consisting of Si, Si 0.75Ge0.25, Si0.59Ge0.41, and Si0.44Ge0.56 are compared to study the effect of increasing Ge concentration. The measured short-circuit current (Jsc) increases from 14 mA/cm2 for Si cells to 21 mA/cm2 for the Si0.44Ge0.56 cells, for one light pass and a 2 μm-thick SiGe layer. The results show an open-circuit voltage (V oc) of 0.61 V for Si cells, dropping to 0.32 V for Si 0.44Ge0.56, consistent with the reduction in band-gap. Quantum efficiency measurements highlight the improved spectral response for higher Ge percentages. Physics based TCAD simulations combined with the experimental results are used to extract lifetime and interface velocity.",

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author = "Hadi, \{Sabina Abdul\} and Pouya Hashemi and Nicole Dilello and Ammar Nayfeh and Hoyt, \{Judy L.\}",

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pages = "5--8",

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Hadi, SA, Hashemi, P, Dilello, N, Nayfeh, A & Hoyt, JL 2012, Thin film a-Si/c-Si_1-xGe_x/c-Si heterojunction solar cells with Ge content up to 56%. in Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012., 6317556, Conference Record of the IEEE Photovoltaic Specialists Conference, pp. 5-8, 38th IEEE Photovoltaic Specialists Conference, PVSC 2012, Austin, TX, United States, 3/06/12. https://doi.org/10.1109/PVSC.2012.6317556

Thin film a-Si/c-Si_1-xGe_x/c-Si heterojunction solar cells with Ge content up to 56%. / Hadi, Sabina Abdul; Hashemi, Pouya; Dilello, Nicole et al.
Program - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012. 2012. p. 5-8 6317556 (Conference Record of the IEEE Photovoltaic Specialists Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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KW - carrier lifetime

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