TY - JOUR
T1 - Thermoelectric potential
T2 - role of bismuth in CuSb1−xBixSe2 for improved transport properties
AU - Jauhar, R. O.M.U.
AU - Raja, A.
AU - Rajkumar, R.
AU - Arulraj, A.
AU - Almansour, Abdulrahman I.
AU - Deepapriya, S.
AU - Era, Paavai
AU - Senthilpandian, M.
AU - Ramachandran, Tholkappiyan
AU - Mangalaraja, R. V.
AU - Siva, V.
N1 - Publisher Copyright:
© The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature 2024.
PY - 2024/6
Y1 - 2024/6
N2 - The bismuth (Bi)-substituted CuSb1-xBixSe2 chalcostibites were synthesized using the horizontal Bridgman-Stockbarger technique combined with ball milling, at temperatures ranging from 303 to 650 K. The impact of Bi substitution was observed in the thermoelectric transport properties by substituting Bi (x = 0, 0.2, 0.4, 0.6) resulted in a decreased Seebeck coefficient and higher electrical resistivity compared to the pure CuSbSe2 sample. Notably, the higher substitution level (x = 0.6) showed the enhanced properties compared to the lower levels. The pristine sample exhibited a power factor of 550 μWK−2 m−1, while the substituted samples showed the values of 20, 37 and 50 μWK−2 m−1, respectively. However, in accordance with the power factor, the pristine compound demonstrated a higher figure of merit (ZT = 0.47) compared to the existing literature values (ZT = 0.21), indicating the superior thermoelectric performance using this synthesis method.
AB - The bismuth (Bi)-substituted CuSb1-xBixSe2 chalcostibites were synthesized using the horizontal Bridgman-Stockbarger technique combined with ball milling, at temperatures ranging from 303 to 650 K. The impact of Bi substitution was observed in the thermoelectric transport properties by substituting Bi (x = 0, 0.2, 0.4, 0.6) resulted in a decreased Seebeck coefficient and higher electrical resistivity compared to the pure CuSbSe2 sample. Notably, the higher substitution level (x = 0.6) showed the enhanced properties compared to the lower levels. The pristine sample exhibited a power factor of 550 μWK−2 m−1, while the substituted samples showed the values of 20, 37 and 50 μWK−2 m−1, respectively. However, in accordance with the power factor, the pristine compound demonstrated a higher figure of merit (ZT = 0.47) compared to the existing literature values (ZT = 0.21), indicating the superior thermoelectric performance using this synthesis method.
UR - https://www.scopus.com/pages/publications/85196534181
U2 - 10.1007/s10854-024-12966-x
DO - 10.1007/s10854-024-12966-x
M3 - Article
AN - SCOPUS:85196534181
SN - 0957-4522
VL - 35
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 18
M1 - 1195
ER -