Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation

Samuel S. Mao; Xianglei Mao; Jong H. Yoo; Ralph Greif; Richard E. Russo

doi:10.1063/1.367207

Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation

Samuel S. Mao
, Xianglei Mao
, Jong H. Yoo
, Ralph Greif
, Richard E. Russo

Mechanical & Nuclear Engineering

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination.

Original language	British English
Pages (from-to)	4462-4465
Number of pages	4
Journal	Journal of Applied Physics
Volume	83
Issue number	8
DOIs	https://doi.org/10.1063/1.367207
State	Published - 15 Apr 1998

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title = "Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation",

abstract = "A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination.",

author = "Mao, \{Samuel S.\} and Xianglei Mao and Yoo, \{Jong H.\} and Ralph Greif and Russo, \{Richard E.\}",

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AU - Mao, Samuel S.

AU - Mao, Xianglei

AU - Yoo, Jong H.

AU - Greif, Ralph

AU - Russo, Richard E.

PY - 1998/4/15

Y1 - 1998/4/15

N2 - A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination.

AB - A model is presented to relate picosecond laser induced thermionic electron emission to the carrier and phonon dynamics of semiconductors. Silicon is chosen as a model material since its optical and thermal properties are well characterized. The temporal profiles of thermionic emission current and total electron yield are obtained as a function of incident laser fluence for different surface conditions, below the silicon surface melting threshold. Two distinct regimes have been found for the dependence of the electron yield on the laser fluence due to thermionic emission and this behavior is related to Auger recombination.

UR - https://www.scopus.com/pages/publications/0032049272

U2 - 10.1063/1.367207

DO - 10.1063/1.367207

M3 - Article

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SN - 0021-8979

VL - 83

SP - 4462

EP - 4465

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 8

ER -

Thermionic electron emission from narrow band-gap semiconductors under picosecond laser excitation

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