Thermal quenching of photoluminescence in Ga(AsBi)

M. K. Shakfa, M. Wiemer, P. Ludewig, K. Jandieri, K. Volz, W. Stolz, S. D. Baranovskii, M. Koch

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20 Scopus citations


We report on a comparative experimental and theoretical study of the thermal quenching of the photoluminescence (PL) intensity in Ga(AsBi)/GaAs heterostructures. An anomalous plateau in the PL thermal quenching is observed at intermediate temperatures under relatively low excitation intensities. Theoretical analysis based on a well-approved approach shows that this peculiar behavior points at a non-monotonous density of states (DOS) in the disorder-induced band tails with at least two-energy-scales. While in previous studies carried out at relatively high excitation intensities a single-energy-scale was sufficient to fit the thermal quenching of the PL in Ga(AsBi), our study at lower excitation intensities proves that two-energy-scales of disorder contribute to the thermal quenching of the PL. Possible energy shapes of the DOS, which can fit experimental data, are revealed.

Original languageBritish English
Article number025709
JournalJournal of Applied Physics
Issue number2
StatePublished - 14 Jan 2015


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