TY - JOUR
T1 - Thermal Characterization of Silicon Carbide MOSFET Module Suitable for High-Temperature Computationally Efficient Thermal-Profile Prediction
AU - Chen, Mengxing
AU - Wang, Huai
AU - Pan, Donghua
AU - Wang, Xiongfei
AU - Blaabjerg, Frede
N1 - Funding Information:
Manuscript received December 6, 2019; revised February 21, 2020; accepted March 16, 2020. Date of publication March 31, 2020; date of current version July 30, 2021. This work was supported by Innovation Fund Denmark under Grant 5185-00006B (HER-SiC). This article was presented in part at the IEEE 4th Southern Power Electronics Conference (IEEE SPEC-2018), Singapore, December 10–13, 2018, and was awarded the Best Paper Award. Recommended for publication by Associate Editor Andreas Lindemann. (Corresponding author: Donghua Pan.) The authors are with the Department of Energy Technology, Aalborg University, 9220 Aalborg, Denmark (e-mail: [email protected]; [email protected]; [email protected]; [email protected]; [email protected]).
Publisher Copyright:
© 2013 IEEE.
PY - 2021/8
Y1 - 2021/8
N2 - This article characterizes the thermal behavior of a commercialized silicon carbide (SiC) power MOSFET module with special concerns on high-temperature operating conditions as well as particular focuses on SiC MOSFET dies. A temperature-dependent Cauer-type thermal model of the SiC MOSFET is proposed and extracted based on offline finite-element simulations. This Cauer model is able to reveal the temperature-dependent thermal property of each packaging layer, and it is suitable for the high-temperature thermal-profile prediction with sufficient computational efficiency. Due to the temperature-dependent thermal properties of the SiC die and ceramic material, the junction-heatsink thermal resistance can be increased by more than 10% under high-temperature conditions (up to 200 °C), which can considerably worsen thermal estimations of the SiC die and its packaging materials. Furthermore, the experimental measurement of transient thermal impedance was conducted under operating temperature variations (with virtual junction temperature ranging from 60.5 °C to 199.6 °C), and the effectiveness of the proposed temperature-dependent Cauer model was fully validated.
AB - This article characterizes the thermal behavior of a commercialized silicon carbide (SiC) power MOSFET module with special concerns on high-temperature operating conditions as well as particular focuses on SiC MOSFET dies. A temperature-dependent Cauer-type thermal model of the SiC MOSFET is proposed and extracted based on offline finite-element simulations. This Cauer model is able to reveal the temperature-dependent thermal property of each packaging layer, and it is suitable for the high-temperature thermal-profile prediction with sufficient computational efficiency. Due to the temperature-dependent thermal properties of the SiC die and ceramic material, the junction-heatsink thermal resistance can be increased by more than 10% under high-temperature conditions (up to 200 °C), which can considerably worsen thermal estimations of the SiC die and its packaging materials. Furthermore, the experimental measurement of transient thermal impedance was conducted under operating temperature variations (with virtual junction temperature ranging from 60.5 °C to 199.6 °C), and the effectiveness of the proposed temperature-dependent Cauer model was fully validated.
KW - Computational efficiency
KW - finite-element method (FEM)
KW - high operating temperature
KW - silicon carbide (SiC) power MOSFET module
KW - temperature-dependent Cauer model
UR - http://www.scopus.com/inward/record.url?scp=85111869298&partnerID=8YFLogxK
U2 - 10.1109/JESTPE.2020.2984586
DO - 10.1109/JESTPE.2020.2984586
M3 - Article
AN - SCOPUS:85111869298
SN - 2168-6777
VL - 9
SP - 3947
EP - 3958
JO - IEEE Journal of Emerging and Selected Topics in Power Electronics
JF - IEEE Journal of Emerging and Selected Topics in Power Electronics
IS - 4
M1 - 9051825
ER -