Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects

Khitem Lahbacha; Fakhreddine Zayer; Hamdi Belgacem; Wael Dghais; Antonio Maffucci

doi:10.1109/NMDC57951.2023.10343766

Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects

Khitem Lahbacha, Fakhreddine Zayer, Hamdi Belgacem, Wael Dghais, Antonio Maffucci

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The focus of this paper is to explore the implementation of resistive random-access memory (RRAM) cells in monolithic integration while addressing the reliability issues that can affect the efficiency of the memory. Specifically, the paper addresses the use of Nickel (Ni) interconnects as a conventional material and the high resistivity and temperatures resulting from Set/Reset switching. The paper proposes using carbon nanotubes (CNT) as an alternative material to improve signal and thermal integrity. The paper analyzes the electrothermal 1D1R structure and compares the conventional Ni metal electrodes to the CNT ones using a full 3D numerical model to provide electrical and thermal responses. The study enhances the accuracy of the model by considering the temperature-dependent electrical and thermal conductivity of the conductive filament and oxide. The paper also introduces a new structure called 1D1R-1R1D that allows for resistive switching for all layers and increases the density of the crossbar memory while addressing problems with the conventional structure. The paper analyzes the issues of voltage drop along wires and thermal crosstalk in both horizontal and vertical directions. The results of this study demonstrate the potential benefits of CNT interconnects for improving the thermal and signal integrity of RRAM crossbars.

Original language	British English
Title of host publication	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	648-653
Number of pages	6
ISBN (Electronic)	9798350335460
DOIs	https://doi.org/10.1109/NMDC57951.2023.10343766
State	Published - 2023
Event	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 - Paestum, Italy Duration: 22 Oct 2023 → 25 Oct 2023

Publication series

Name	2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Conference

Conference	18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023
Country/Territory	Italy
City	Paestum
Period	22/10/23 → 25/10/23

Keywords

1D1R-1R1D
3D RRAM crossbar
Carbon nanotubes
electrothermal effects
Signal integrity
Thermal integrity

Access to Document

10.1109/NMDC57951.2023.10343766

Cite this

Lahbacha, K., Zayer, F., Belgacem, H., Dghais, W., & Maffucci, A. (2023). Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 (pp. 648-653). (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/NMDC57951.2023.10343766

Lahbacha, Khitem ; Zayer, Fakhreddine ; Belgacem, Hamdi et al. / Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. pp. 648-653 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

@inproceedings{5d71e0fe4d404cf0bc16d9a2c127b64b,

title = "Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects",

abstract = "The focus of this paper is to explore the implementation of resistive random-access memory (RRAM) cells in monolithic integration while addressing the reliability issues that can affect the efficiency of the memory. Specifically, the paper addresses the use of Nickel (Ni) interconnects as a conventional material and the high resistivity and temperatures resulting from Set/Reset switching. The paper proposes using carbon nanotubes (CNT) as an alternative material to improve signal and thermal integrity. The paper analyzes the electrothermal 1D1R structure and compares the conventional Ni metal electrodes to the CNT ones using a full 3D numerical model to provide electrical and thermal responses. The study enhances the accuracy of the model by considering the temperature-dependent electrical and thermal conductivity of the conductive filament and oxide. The paper also introduces a new structure called 1D1R-1R1D that allows for resistive switching for all layers and increases the density of the crossbar memory while addressing problems with the conventional structure. The paper analyzes the issues of voltage drop along wires and thermal crosstalk in both horizontal and vertical directions. The results of this study demonstrate the potential benefits of CNT interconnects for improving the thermal and signal integrity of RRAM crossbars.",

keywords = "1D1R-1R1D, 3D RRAM crossbar, Carbon nanotubes, electrothermal effects, Signal integrity, Thermal integrity",

author = "Khitem Lahbacha and Fakhreddine Zayer and Hamdi Belgacem and Wael Dghais and Antonio Maffucci",

note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023 ; Conference date: 22-10-2023 Through 25-10-2023",

year = "2023",

doi = "10.1109/NMDC57951.2023.10343766",

language = "British English",

series = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "648--653",

booktitle = "2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023",

address = "United States",

}

Lahbacha, K, Zayer, F, Belgacem, H, Dghais, W & Maffucci, A 2023, Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects. in 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Institute of Electrical and Electronics Engineers Inc., pp. 648-653, 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023, Paestum, Italy, 22/10/23. https://doi.org/10.1109/NMDC57951.2023.10343766

Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects. / Lahbacha, Khitem; Zayer, Fakhreddine; Belgacem, Hamdi et al.
2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc., 2023. p. 648-653 (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects

AU - Lahbacha, Khitem

AU - Zayer, Fakhreddine

AU - Belgacem, Hamdi

AU - Dghais, Wael

AU - Maffucci, Antonio

PY - 2023

Y1 - 2023

N2 - The focus of this paper is to explore the implementation of resistive random-access memory (RRAM) cells in monolithic integration while addressing the reliability issues that can affect the efficiency of the memory. Specifically, the paper addresses the use of Nickel (Ni) interconnects as a conventional material and the high resistivity and temperatures resulting from Set/Reset switching. The paper proposes using carbon nanotubes (CNT) as an alternative material to improve signal and thermal integrity. The paper analyzes the electrothermal 1D1R structure and compares the conventional Ni metal electrodes to the CNT ones using a full 3D numerical model to provide electrical and thermal responses. The study enhances the accuracy of the model by considering the temperature-dependent electrical and thermal conductivity of the conductive filament and oxide. The paper also introduces a new structure called 1D1R-1R1D that allows for resistive switching for all layers and increases the density of the crossbar memory while addressing problems with the conventional structure. The paper analyzes the issues of voltage drop along wires and thermal crosstalk in both horizontal and vertical directions. The results of this study demonstrate the potential benefits of CNT interconnects for improving the thermal and signal integrity of RRAM crossbars.

AB - The focus of this paper is to explore the implementation of resistive random-access memory (RRAM) cells in monolithic integration while addressing the reliability issues that can affect the efficiency of the memory. Specifically, the paper addresses the use of Nickel (Ni) interconnects as a conventional material and the high resistivity and temperatures resulting from Set/Reset switching. The paper proposes using carbon nanotubes (CNT) as an alternative material to improve signal and thermal integrity. The paper analyzes the electrothermal 1D1R structure and compares the conventional Ni metal electrodes to the CNT ones using a full 3D numerical model to provide electrical and thermal responses. The study enhances the accuracy of the model by considering the temperature-dependent electrical and thermal conductivity of the conductive filament and oxide. The paper also introduces a new structure called 1D1R-1R1D that allows for resistive switching for all layers and increases the density of the crossbar memory while addressing problems with the conventional structure. The paper analyzes the issues of voltage drop along wires and thermal crosstalk in both horizontal and vertical directions. The results of this study demonstrate the potential benefits of CNT interconnects for improving the thermal and signal integrity of RRAM crossbars.

KW - 1D1R-1R1D

KW - 3D RRAM crossbar

KW - Carbon nanotubes

KW - electrothermal effects

KW - Signal integrity

KW - Thermal integrity

UR - http://www.scopus.com/inward/record.url?scp=85182021303&partnerID=8YFLogxK

U2 - 10.1109/NMDC57951.2023.10343766

DO - 10.1109/NMDC57951.2023.10343766

M3 - Conference contribution

AN - SCOPUS:85182021303

T3 - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

SP - 648

EP - 653

BT - 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 18th IEEE Nanotechnology Materials and Devices Conference, NMDC 2023

Y2 - 22 October 2023 through 25 October 2023

ER -

Lahbacha K, Zayer F, Belgacem H, Dghais W, Maffucci A. Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects. In 2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023. Institute of Electrical and Electronics Engineers Inc. 2023. p. 648-653. (2023 IEEE Nanotechnology Materials and Devices Conference, NMDC 2023). doi: 10.1109/NMDC57951.2023.10343766

Thermal and Signal Integrity Improvement in a 3D RRAM Crossbar with Carbon Nanotube Interconnects

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Keywords

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