The significant effect of the size of a nano-metal particle on the interface with a semiconductor substrate

Reduced metal-semiconductor contacts to sub 10 nm range have exhibited interesting characteristics that drastically deviate from those related to planar Schottky contacts. We present a theoretical model with analytical analyses that describe the crucial effect of the size of the metal contact, with a semiconductor substrate, on the energy band structure at the interface. We present a direct method for calculating the reduced depletion width, the enhanced built-in potential and enhanced electric field at the interface. The calculations showed that these parameters are direct functions of the radius of the nano metal particle when the substrate is moderately doped and this particle's radius effect diminishes when the sample is highly doped.