The significant effect of the size of a nano-metal particle on the interface with a semiconductor substrate

Moh'D Rezeq, Mohammed Ismail

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

5 Scopus citations

Abstract

Reduced metal-semiconductor contacts to sub 10 nm range have exhibited interesting characteristics that drastically deviate from those related to planar Schottky contacts. We present a theoretical model with analytical analyses that describe the crucial effect of the size of the metal contact, with a semiconductor substrate, on the energy band structure at the interface. We present a direct method for calculating the reduced depletion width, the enhanced built-in potential and enhanced electric field at the interface. The calculations showed that these parameters are direct functions of the radius of the nano metal particle when the substrate is moderately doped and this particle's radius effect diminishes when the sample is highly doped.

Original languageBritish English
Title of host publication2012 12th IEEE International Conference on Nanotechnology, NANO 2012
DOIs
StatePublished - 2012
Event2012 12th IEEE International Conference on Nanotechnology, NANO 2012 - Birmingham, United Kingdom
Duration: 20 Aug 201223 Aug 2012

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Conference

Conference2012 12th IEEE International Conference on Nanotechnology, NANO 2012
Country/TerritoryUnited Kingdom
CityBirmingham
Period20/08/1223/08/12

Fingerprint

Dive into the research topics of 'The significant effect of the size of a nano-metal particle on the interface with a semiconductor substrate'. Together they form a unique fingerprint.

Cite this