The effect of pressure and growth temperature on the characteristics of polycrystalline In 2Se 3 films in metal organic chemical vapor deposition

Seong Man Yu, Jin Hyoung Yoo, Shashikant P. Patole, Jong Hak Lee, Ji Beom Yoo

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

This study examined the effect of the growth parameters on the characteristics of polycrystalline In 2Se 3 (IS) films using metal organic chemical vapor deposition. Trimethylindium and ditertiarybutylselenide metal organic compounds were used as the indium and selenium sources to deposit the IS films on soda lime glass. The effect of the growth pressure was examined from 10 to 80 torr. The effect of the growth temperature was studied in the range, 300°C to 500°C. Scanning electron microscopy and high resolution x-ray diffraction was used to analyze the morphological and structural properties of the deposited films. Optical absorption was used to examine the optical properties and band gap of the deposited IS films. The details of the analysis are presented.

Original languageBritish English
Pages (from-to)245-250
Number of pages6
JournalElectronic Materials Letters
Volume8
Issue number3
DOIs
StatePublished - Jun 2012

Keywords

  • buffer layer
  • In Se
  • metal organic chemical vapor deposition
  • scanning electron microscopy
  • thin solid films

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