The dependence of Schottky junction (I-V) characteristics on the metal probe size in nano metal-semiconductor contacts

Moh'D Rezeq; Ahmed Ali; Shashikant P. Patole; Khouloud Eledlebi; Ripon Kumar Dey; Bo Cui

doi:10.1063/1.5035400

The dependence of Schottky junction (I-V) characteristics on the metal probe size in nano metal-semiconductor contacts

Moh'D Rezeq, Ahmed Ali, Shashikant P. Patole, Khouloud Eledlebi, Ripon Kumar Dey, Bo Cui

University of Waterloo

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We have studied the dependence of Schottky junction (I-V) characteristics on the metal contact size in metal-semiconductor (M-S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I-V) characteristics on the nanoprobe size when it is in contact with a semiconductor substrate. The results show the evolution from sub-10 nm reversed Schottky diode behavior to the normal diode behavior at 100 nm. These results also indicate the direct correlation between the electric field at the M-S interface and the Schottky rectification behavior. The effect of the metal contact size on nano-Schottky diode structure is clearly demonstrated, which would help in designing a new type of nano-devices at sub-10 nm scale.

Original language	British English
Article number	055122
Journal	AIP Advances
Volume	8
Issue number	5
DOIs	https://doi.org/10.1063/1.5035400
State	Published - 1 May 2018

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title = "The dependence of Schottky junction (I-V) characteristics on the metal probe size in nano metal-semiconductor contacts",

abstract = "We have studied the dependence of Schottky junction (I-V) characteristics on the metal contact size in metal-semiconductor (M-S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I-V) characteristics on the nanoprobe size when it is in contact with a semiconductor substrate. The results show the evolution from sub-10 nm reversed Schottky diode behavior to the normal diode behavior at 100 nm. These results also indicate the direct correlation between the electric field at the M-S interface and the Schottky rectification behavior. The effect of the metal contact size on nano-Schottky diode structure is clearly demonstrated, which would help in designing a new type of nano-devices at sub-10 nm scale.",

author = "Moh'D Rezeq and Ahmed Ali and Patole, {Shashikant P.} and Khouloud Eledlebi and Dey, {Ripon Kumar} and Bo Cui",

note = "Funding Information: This research was supported by Khalifa University KURIFL1 and CIRA fund, and by ATIC–SRC fund, contract number 2012–VJ–2333. Publisher Copyright: {\textcopyright} 2018 Author(s).",

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doi = "10.1063/1.5035400",

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AU - Rezeq, Moh'D

AU - Ali, Ahmed

AU - Patole, Shashikant P.

AU - Eledlebi, Khouloud

AU - Dey, Ripon Kumar

AU - Cui, Bo

PY - 2018/5/1

Y1 - 2018/5/1

N2 - We have studied the dependence of Schottky junction (I-V) characteristics on the metal contact size in metal-semiconductor (M-S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I-V) characteristics on the nanoprobe size when it is in contact with a semiconductor substrate. The results show the evolution from sub-10 nm reversed Schottky diode behavior to the normal diode behavior at 100 nm. These results also indicate the direct correlation between the electric field at the M-S interface and the Schottky rectification behavior. The effect of the metal contact size on nano-Schottky diode structure is clearly demonstrated, which would help in designing a new type of nano-devices at sub-10 nm scale.

AB - We have studied the dependence of Schottky junction (I-V) characteristics on the metal contact size in metal-semiconductor (M-S) junctions using different metal nanoprobe sizes. The results show strong dependence of (I-V) characteristics on the nanoprobe size when it is in contact with a semiconductor substrate. The results show the evolution from sub-10 nm reversed Schottky diode behavior to the normal diode behavior at 100 nm. These results also indicate the direct correlation between the electric field at the M-S interface and the Schottky rectification behavior. The effect of the metal contact size on nano-Schottky diode structure is clearly demonstrated, which would help in designing a new type of nano-devices at sub-10 nm scale.

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The dependence of Schottky junction (I-V) characteristics on the metal probe size in nano metal-semiconductor contacts

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